Optimizing the seeded CVD-growth of uniform graphene films on silicon
نویسندگان
چکیده
Abstract Chemical vapor deposition (CVD) has great potential to produce graphene films at large-scale. However, CVD production of usually requires a catalytic metal substrate, such as copper. Recently we have developed new method grow directly on crystalline silicon wafers with thermally grown 300 nm oxide layer, using seeded-CVD growth approach. The use methane the feedstock and optimized seeds led enhanced film formation, which SEM, X-ray photo-electron Raman spectroscopies indicate consist layers formed by coalescence expanding “graphene seeds”. resultant regions single crystallites within them result lateral seeds. In addition, observed that unilateral conductivity is consistent presence nanoribbons application in device fabrication.
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ژورنال
عنوان ژورنال: Journal of Materials Science
سال: 2023
ISSN: ['1573-4803', '0022-2461']
DOI: https://doi.org/10.1007/s10853-023-08629-7